Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher

A linear polishing belt for use in chemical-mechanical polishing (CMP) of a substrate comprises an opening and a flexible monitoring window secured to the belt to close the opening and to create a monitoring channel in the belt. A plurality of monitoring channels can also be used. A film thickness m...

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Bibliographische Detailangaben
Hauptverfasser:	CUTINI, JERAULD J, PECEN, JIRI, JAIRATH, RAHUL, CHADDA, SAKET, KRUSELL, WILBUR C, ENGDAHL, ERIK H
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TOOLS FOR GRINDING, BUFFING, OR SHARPENING TRANSPORTING
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Beschreibung
Zusammenfassung:	A linear polishing belt for use in chemical-mechanical polishing (CMP) of a substrate comprises an opening and a flexible monitoring window secured to the belt to close the opening and to create a monitoring channel in the belt. A plurality of monitoring channels can also be used. A film thickness monitor comprising an interferometer can be disposed alongside the belt or at least partially within a region bound by it. The monitoring channel and the film thickness monitor can be used in the CMP process to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.