Method for preventing corrosion of a metallic layer of a semiconductor chip

The present invention provides a method for preventing corrosion of an aluminum-containing metallic layer having a plurality of trenches on the surface of a semiconductor chip caused by chlorine atoms residing on side walls of the trenches of the metallic layer after a trench etching process. The me...

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Bibliographische Detailangaben
Hauptverfasser:	TSAI-SEN, LIN, JOU, CHOU-SHIN, WANG, TINGS, LI, CHIN-KANG
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention provides a method for preventing corrosion of an aluminum-containing metallic layer having a plurality of trenches on the surface of a semiconductor chip caused by chlorine atoms residing on side walls of the trenches of the metallic layer after a trench etching process. The method comprises the following steps: (1) removing the photo resistance layer on top of the metallic layer by ashing at temperatures between 178 DEG C. and 200 DEG C. after a trench etching process, (2) using an acidic solution comprising hydroxylamine (NH2OH), hydroquinone C6H4(OH)2, monoethanolanine (HOCH2CH2NH2) and water to wash off residues on the surface of the semiconductor chip, and (3) heating the semiconductor chip for a predetermined time period at temperatures between 200 DEG C. and 250 DEG C. so as to completely dissipate the chlorine atoms resided on the side walls of the metallic layer for preventing recurrent corrosion of an aluminum-containing metallic layer.