Post-CMP wet-HF cleaning station

The present invention provides an apparatus for cleaning semiconductor workpieces following a Chemical Mechanical Planarization ("CMP") procedure. Initially, a workpiece is scrubbed to remove some of the slurry material and other contaminants on the surfaces of the workpiece. Next, the wor...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	GUPTA, ANAND, GOPALAN, PERIYA, MACERNIE, JON R, TROJAN, DANIEL R, CUNNANE, JEFFREY B, KARLSRUD, CHRIS
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:	The present invention provides an apparatus for cleaning semiconductor workpieces following a Chemical Mechanical Planarization ("CMP") procedure. Initially, a workpiece is scrubbed to remove some of the slurry material and other contaminants on the surfaces of the workpiece. Next, the workpiece is transported into a chemical-etch cleaning station wherein the workpiece is positioned horizontally such that both the upper and lower surfaces are substantially exposed. The workpiece then is immersed in a cleaning solution which is moved around the various surfaces of the workpiece. The workpiece is immersed in the cleaning solution for a sufficient length of time to remove an appropriate layer of oxide, thereby removing contaminants and smoothing micro scratches from the surfaces of the workpiece.