Thin film semiconductor device, method for fabricating the same and semiconductor device
A thin film semiconductor device includes: a substrate having an insulating surface; a semiconductor layer containing silicon and germanium formed on the substrate; a gate insulating film formed on the semiconductor layer; and a gate electrode formed on the gate insulating film, wherein the gate ins...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A thin film semiconductor device includes: a substrate having an insulating surface; a semiconductor layer containing silicon and germanium formed on the substrate; a gate insulating film formed on the semiconductor layer; and a gate electrode formed on the gate insulating film, wherein the gate insulating film includes a thermal oxide film formed by thermally oxidizing a surface of the semiconductor layer. |
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