Method for rapid thermal processing (RTP) of silicon substrates

A method of rapid thermal processing (RTP) of a silicon substrate is presented, where a very low partial pressure of reactive gas is used to control etching and growth of oxides on the silicon surface.

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Bibliographische Detailangaben
Hauptverfasser: SOMMER, HELMUT, LERCH, WILFRIED, NENYEI, ZSOLT
Format: Patent
Sprache:eng
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Zusammenfassung:A method of rapid thermal processing (RTP) of a silicon substrate is presented, where a very low partial pressure of reactive gas is used to control etching and growth of oxides on the silicon surface.