Method of forming a semiconductor device having narrow gate electrode

A semiconductor device having a narrow gate electrode and a process of fabricating such a device is disclosed. The semiconductor device is formed by forming a polysilicon block over a substrate and forming a nitride spacer adjacent at least one sidewall of the polysilicon block. A portion of the polysilicon block opposite the nitride spacer is selectively removed. The polysilicon block is then oxidized to form an oxide portion adjacent one side of the polysilicon block and to form a narrow polysilicon block, wherein the nitride spacer inhibits oxidation of another side of the polysilicon block. The narrow polysilicon block is used as a gate electrode.