Modified dual damascene process

A process for creating a metal filled, dual damascene opening, in a composite insulator layer, has been developed. The process features selective RIE procedures, used to create a wide diameter opening in an upper silicon oxide layer, and a narrow diameter opening in a lower silicon oxide layer. Smal...

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Sprache:eng
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Zusammenfassung:A process for creating a metal filled, dual damascene opening, in a composite insulator layer, has been developed. The process features selective RIE procedures, used to create a wide diameter opening in an upper silicon oxide layer, and a narrow diameter opening in a lower silicon oxide layer. Small area, silicon nitride islands, or shapes, a component of the composite insulator layer, are used as a stop layer, during the selective RIE procedures. The use of small area, silicon nitride shapes, offers less composite insulator capacitance, than counterparts fabricated using larger area, silicon nitride stop layers.