Method for forming a semiconductor device structure having a laser portion

Method for forming a semiconductor device structure having a laser portion

A heterostructure device includes a ridge-waveguide laser monolithically integrated with a ridge-waveguide rear facet monitor (RFM). An integral V-groove etched directly into the device substrate enables passive alignment of an optical fiber to the active region of the laser. The layer and RFM facet...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: NEGRI, ALFRED JOSEPH, ROTHMAN, MARK ALAN, SHIEH, CHAN-LONG, ARMIENTO, CRAIG ALFRED, THOMPSON, JOHN ALVIN
Format: Patent
Sprache:eng
Schlagworte:
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
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Beschreibung
Zusammenfassung:A heterostructure device includes a ridge-waveguide laser monolithically integrated with a ridge-waveguide rear facet monitor (RFM). An integral V-groove etched directly into the device substrate enables passive alignment of an optical fiber to the active region of the laser. The layer and RFM facets were formed using an in-situ multistep reactive ion etch process.