Eclectrophotographic light-receiving member and process for its production

An electrophotographic light-receiving member comprising a conductive support and a light-receiving layer having a photoconductive layer showing a photoconductivity, formed on the conductive support and formed of a non-monocrystalline material mainly composed of a silicon atom and containing at least one of a hydrogen atom and a halogen atom, wherein said photoconductive layer contains from 10 atomic % to 30 atomic % of hydrogen, the characteristic energy of exponential tail obtained from light absorption spectra at light-incident portions at least of the photoconductive layer is from 50 meV to 60 meV, and the density of states of localization in the photoconductive layer is from 1x1014 cm-3 to 1x1016 cm-3. Since the in-gap levels of the photoconductive layer has been controlled, the light-receiving member can be improved in environmental stability and exposure memory at the same time and have superior potential characteristics and image characteristics.