In-plane magnetoresistance bridge
A magnetic field sensor device is disclosed comprising two substantially identical n-doped, high carrier mobility semiconductor films (e.g., InSb films) each containing a pattern of cylindrical holes or antidots that cause the resistance of the respective films to vary depending upon the direction o...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A magnetic field sensor device is disclosed comprising two substantially identical n-doped, high carrier mobility semiconductor films (e.g., InSb films) each containing a pattern of cylindrical holes or antidots that cause the resistance of the respective films to vary depending upon the direction of the in-plane component of an applied magnetic field. |
|---|