Semiconductor lasers
PCT No. PCT/GB97/00225 Sec. 371 Date Jun. 19, 1998 Sec. 102(e) Date Jun. 19, 1998 PCT Filed Jan. 24, 1997 PCT Pub. No. WO97/27651 PCT Pub. Date Jul. 31, 1997A 'big spot' semiconductor laser has a passive modal spot size transformer (2) formed integrally in tandem with the active region (1)...
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Zusammenfassung: | PCT No. PCT/GB97/00225 Sec. 371 Date Jun. 19, 1998 Sec. 102(e) Date Jun. 19, 1998 PCT Filed Jan. 24, 1997 PCT Pub. No. WO97/27651 PCT Pub. Date Jul. 31, 1997A 'big spot' semiconductor laser has a passive modal spot size transformer (2) formed integrally in tandem with the active region (1) of the laser. The passive transformer has a layer structure (5, 6) that supports a restricted set of modes and is designed such that, at the laser frequency, its length provides a phase slippage of pi between modes of adjacent order. |
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