Semiconductor device

A semiconductor device includes a buffer layer (23) having a doped region (24), a barrier layer (26) over the buffer layer (23) and having a doped region (27), and a channel layer (25) located between the buffer layer (23) and the barrier layer (26) where the doping density of the doped region (27)...

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Bibliographische Detailangaben
Hauptverfasser:	EISENBEISER, KURT W, HUANG, JENN-HWA, NAIR, VIJAY K, WANG, YANG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A semiconductor device includes a buffer layer (23) having a doped region (24), a barrier layer (26) over the buffer layer (23) and having a doped region (27), and a channel layer (25) located between the buffer layer (23) and the barrier layer (26) where the doping density of the doped region (27) in the barrier layer (26) is higher than the doping densities of the channel layer (25) and the doped region (24) in the first buffer layer (23).