Controlled solder interdiffusion for high power semiconductor laser diode die bonding

A method and a resulting device for mounting a semiconductor to a submount by depositing a first layer of a first metal solder having a selected first melting point and corresponding thickness onto a surface of the semiconductor. Depositing a second layer of a second metal solder having a selected s...

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Bibliographische Detailangaben
Hauptverfasser:	HEIM, PETER JOHN SCHULTZ, MERRITT, SCOTT ANDREW, DAGENAIS, MARIO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method and a resulting device for mounting a semiconductor to a submount by depositing a first layer of a first metal solder having a selected first melting point and corresponding thickness onto a surface of the semiconductor. Depositing a second layer of a second metal solder having a selected second melting point higher than the first melting point and a corresponding selected thickness onto a surface of the submount. Disposing the semiconductor surface and submount surface in confronting intimate contact and heating the submount and semiconductor to a temperature greater than the first temperature and lower that the second temperature for initiating and promoting liquid interdiffusion between the first and second solders.