Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same
In one form of the invention, an emitter structure for a bipolar transistor is disclosed. The structure is comprised of an emitter layer 6 of AlxGa1-xAs, where x>0.4, abutting a base layer 8.
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | In one form of the invention, an emitter structure for a bipolar transistor is disclosed. The structure is comprised of an emitter layer 6 of AlxGa1-xAs, where x>0.4, abutting a base layer 8. |
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