Method of forming a lithographic pattern

A method of forming a lithographic pattern consists in establishing a charged beam, isolating such charged particles that have the energy dispersion falling within 0.1 and 5.0 eV, and removing such particles from the beam that have the energy dispersion lying outside said range. Then the thus-establ...

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Bibliographische Detailangaben
Hauptverfasser:	VELIKHOV, EVGENY PAVLOVICH, KULESHOVA, EVGENIA ANATOLIEVNA, SHTROMBAKH, YAROSLAV IGOREVICH, MEILIKHOV, EVGENY ZALMANOVICH, PRIKHODKO, KIRILL EVGENIEVICH, OLSHANSKY, EVGENY DMITRIEVICH, RYAZANTSEV, EVGENY PETROVICH, RYLKOV, VLADIMIR VASILIEVICH, GUROVICH, BORIS ARONOVICH, DOLGY, DMITRY IOSIFIVICH, DOMANTOVSKY, ALEXANDR GRIGORIEVICH, ARONZON
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	A method of forming a lithographic pattern consists in establishing a charged beam, isolating such charged particles that have the energy dispersion falling within 0.1 and 5.0 eV, and removing such particles from the beam that have the energy dispersion lying outside said range. Then the thus-established charged beam is subjected to primary focusing until the beam divergence value of from 5.10-2 to 10-4 rad is attained, a mask having a pattern stencil is irradiated with the focused charged beam. Thereupon the charged beam that has been modulated while passing through the mask is subjected to secondary focusing in order to form on the radiation-sensitive layer under processing a lithographic pattern corresponding to the stencil of a scaled-down mask pattern.