Sense amplifier for flash memory

The present invention is embodied in a method and apparatus for sensing the logic state of a flash memory cell utilizing a current mode sense amplifier circuit that is less susceptible to noise. The sense amplifier consists of a controlled current source with mirroring, an integrator and a comparator. In the sensing phase, a cell with a stored low logic level will cause a first current to flow. The first current will be mirrored by a second current. The second current is integrated and compared against a reference voltage to determine the logic state of the cell. By integrating and comparing the mirrored current, the sense amplifier circuit is less susceptible to spurious signals caused by noise.