Method of manufacturing VCSEL arrays using vapor phase epitaxy to achieve uniform device-to-device operating characteristics

An array of infrared vertical cavity surface-emitting lasers (VCSELs) and method of manufacturing the same is disclosed which reduces device-to-device non-uniformity for VCSEL arrays manufactured using well-known vapor phase epitaxial processes. The method involves growing layers comprising a standard infrared VCSEL array using a vapor phase epitaxial process on a substrate which is mosoriented from the (100) plane in the {111}A direction by preferably between eight and twelve degrees or more.