Capacitor formed within printed circuit board

A process for manufacturing a multi-layer printed circuit board comprises a first metallic layer, a first Ta or Hf layer on one face of the first metallic layer, a first layer of Ta2O5 or HfO on a face of the Ta or Hf layer opposite the first metallic layer, a second metallic layer on the Ta2O5 or H...

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Bibliographische Detailangaben
Hauptverfasser:	MAHMOUD ISSA SAID, LAUFFER, JOHN MATTHEW, HOFFARTH, JOSEPH GERARD
Format:	Patent
Sprache:	eng
Schlagworte:	CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS PRINTED CIRCUITS TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:	A process for manufacturing a multi-layer printed circuit board comprises a first metallic layer, a first Ta or Hf layer on one face of the first metallic layer, a first layer of Ta2O5 or HfO on a face of the Ta or Hf layer opposite the first metallic layer, a second metallic layer on the Ta2O5 or HfO layer opposite the Ta or Hf layer, a first dielectric layer on the first metallic layer opposite the Ta of Hf layer, and a second dielectric layer on the second metallic layer opposite the Ta2O5 or HfO layer. A multi-layer printed circuit board is formed by adding the following layers to form the second capacitor. A third metallic layer on said second dielectric layer, a second Ta or Hf layer on a face of the third metallic layer, a second Ta2O5 or HfO layer on a face of the second Ta or Hf layer opposite the third metallic layer, a fourth metallic layer on the second Ta2O5 or HfO layer opposite the second Ta or Hf layer, and a third dielectric layer on the fourth metallic layer opposite the second Ta2O5 or HfO layer.