Method for making silicon germanium alloy and electric device structures

A method for fabricating silicon-germanium alloy on a sapphire substrate of the present invention comprises the steps of passivating a surface of a sapphire substrate, maintaining a deposition temperature of about 900 degrees C., exposing the passivated surface to a flow of about 1 slm of about 2 pe...

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Bibliographische Detailangaben
Hauptverfasser:	DE LA HOUSSAYE, PAUL R, LAGNADO, ISAAC, KASA, SHANNON D, DUBBELDAY, WADAD B
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A method for fabricating silicon-germanium alloy on a sapphire substrate of the present invention comprises the steps of passivating a surface of a sapphire substrate, maintaining a deposition temperature of about 900 degrees C., exposing the passivated surface to a flow of about 1 slm of about 2 percent silane in a hydrogen carrier and a flow of at least 200 sccm of about 10 percent germane in a hydrogen carrier to form a layer of single crystal silicon germanium alloy on the passivated surface of the sapphire substrate, and ramping the temperature down to about 650 degrees C. during the step of exposing the passivated surface to the germane gas.