Method of roughing a metallic surface of a semiconductor deposition tool

The present invention provides a method of roughing a metallic surface. In one embodiment, the method includes the steps of positioning a pressurized grit source a predetermined distance from and at an angle substantially perpendicular to the metallic surface of the object that is to be roughened, p...

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Bibliographische Detailangaben
Hauptverfasser:	CHOQUETTE, SCOTT F, DANIEL, TIMOTHY J, WOLFSON, CRISTIN A
Format:	Patent
Sprache:	eng
Schlagworte:	ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL GRINDING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS POLISHING SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention provides a method of roughing a metallic surface. In one embodiment, the method includes the steps of positioning a pressurized grit source a predetermined distance from and at an angle substantially perpendicular to the metallic surface of the object that is to be roughened, projecting grit from the pressurized grit source against the metallic surface, forming a grit impact area, which in certain embodiments may be seven inches square, on the metallic surface, and moving the pressurized grit source from the grit impact area after an amount of time that ranges from about three seconds to about eight seconds.