Hermetic sealing of a substrate of high thermal conductivity using an interposer of low thermal conductivity

The present invention relates generally to a new process for hermetically sealing of a high thermally conductive substrate, such as, an aluminum nitride substrate, using a low thermally conductive interposer and structure thereof. More particularly, the invention encompasses a hermetic cap which is...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: INTERRANTE, MARIO J, ECONOMIKOS, LAERTIS, HERRON, LESTER WYNN
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present invention relates generally to a new process for hermetically sealing of a high thermally conductive substrate, such as, an aluminum nitride substrate, using a low thermally conductive interposer and structure thereof. More particularly, the invention encompasses a hermetic cap which is secured to an aluminum nitride substrate using the novel thermal interposer. The novel thermal interposer basically comprises of layers of relatively high thermal conductive metallic materials sandwiching a core layer of low thermal conductive metallic material.