Crystal substrate processing

This disclosure relates to the fabrication of components on a single crystal substrate. A method is disclosed of overcoming the problems encountered in defining etched features on a silicon substrate. In particular, there is disclosed a method of producing a multichip module comprising a silicon sub...

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Bibliographische Detailangaben
Hauptverfasser:	HARCOURT, ROGER WILLIAM, GEEAR, MARTIN CHRISTOPHER, AYLIFFE, PETER JOHN, PEALL, ROBERT GEORGE, PARKER, JAMES WILSON, HARRISON, PAUL MARK
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	This disclosure relates to the fabrication of components on a single crystal substrate. A method is disclosed of overcoming the problems encountered in defining etched features on a silicon substrate. In particular, there is disclosed a method of producing a multichip module comprising a silicon substrate having surface features for the placement of components. An organic dielectric is applied to the substrate prior to the use of an etchant whereby interconnects can be defined.