Reliable low resistance strap for trench storage DRAM cell using selective epitaxy

Reliable low resistance strap for trench storage DRAM cell using selective epitaxy

Strap resistance, surface strap shorts and wordline capacitance can be reduced by providing a selectively grown silicon strap which tapers away from spacer nitride and has less contact with spacer nitride. In addition the strap is optionally doped with an arsenic implant which reduces resistance.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LEBLANC, ANDRE R, MANDELMAN, JACK A, HO, HERBERT L, SRINIVASAN, RADHIKA
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Strap resistance, surface strap shorts and wordline capacitance can be reduced by providing a selectively grown silicon strap which tapers away from spacer nitride and has less contact with spacer nitride. In addition the strap is optionally doped with an arsenic implant which reduces resistance.