X-ray lithography resists

Poly (diene sulfones) have superior properties as X-ray resists. Many poly (diene sulfones) have an X-ray sensitivity below about 50 mJ/cm2, and a glass transition temperature above about 70 DEG C. A preferred X-ray resist is poly (1,3-hexadiene sulfone). A method of synthesizing poly (diene sulfone...

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Bibliographische Detailangaben
Hauptverfasser:	DALY, WILLIAM H, DAVIES, JACK D
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:	Poly (diene sulfones) have superior properties as X-ray resists. Many poly (diene sulfones) have an X-ray sensitivity below about 50 mJ/cm2, and a glass transition temperature above about 70 DEG C. A preferred X-ray resist is poly (1,3-hexadiene sulfone). A method of synthesizing poly (diene sulfones) is disclosed, in which a diene monomer is dissolved in a molar excess of a nitroalkane at low temperature, for example in a molar excess of dried 2-nitropropane in a -78 DEG C. dry ice/acetone bath, and reacted with a molar excess of sulfur dioxide in the presence of a free radical initiator such as tert-butyl-hydroperoxide.