Four transistor SRAM cell
A device structure comprising a resistor in a via opening between adjacent levels of metallization of a conventional field effect transistor (FET) by disposing amorphous ( alpha ) silicon between metal barrier layers, such as titanium tungsten and titanium nitride, at the via opening which is filled...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A device structure comprising a resistor in a via opening between adjacent levels of metallization of a conventional field effect transistor (FET) by disposing amorphous ( alpha ) silicon between metal barrier layers, such as titanium tungsten and titanium nitride, at the via opening which is filled with a conductive material, such as tungsten, the device structure enabling a conventional FET and the resistor to only take the space of a conventional FET due to the unique properties of alpha -silicon. |
|---|