Strained Si/SiGe layers on insulator

An SOI substrate and method for forming is described incorporating the steps of forming strained layers of Si and/or SiGe on a first substrate, forming a layer of Si and/or SiO2 over the strained layers, bonding a second substrate having an insulating layer on its upper surface to the top surface ab...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ISMAIL, KHALID EZZELDIN, CHU, JACK OON
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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