Strained Si/SiGe layers on insulator

Strained Si/SiGe layers on insulator

An SOI substrate and method for forming is described incorporating the steps of forming strained layers of Si and/or SiGe on a first substrate, forming a layer of Si and/or SiO2 over the strained layers, bonding a second substrate having an insulating layer on its upper surface to the top surface ab...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ISMAIL, KHALID EZZELDIN, CHU, JACK OON
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An SOI substrate and method for forming is described incorporating the steps of forming strained layers of Si and/or SiGe on a first substrate, forming a layer of Si and/or SiO2 over the strained layers, bonding a second substrate having an insulating layer on its upper surface to the top surface above the strained layers, and removing the first substrate. The invention overcomes the problem of forming strained Si and SiGe layers on insulating substrates.