Method of making LDD structure spaced from channel doped region

Method of making LDD structure spaced from channel doped region

A MOSFET and method of manufacture thereof is disclosed in which an ion implantation layer formed in the channel region is isolated from the source and drain regions. The source and drain regions are of a lightly doped drain or "LDD" structure. According to this MOSFET and method, short ch...

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Hauptverfasser: SHIN, HYUNG SOON
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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HYUNG SOON
description A MOSFET and method of manufacture thereof is disclosed in which an ion implantation layer formed in the channel region is isolated from the source and drain regions. The source and drain regions are of a lightly doped drain or "LDD" structure. According to this MOSFET and method, short channel effects are decreased by the channel implant, yet hot carrier and doping compensation effects are decreased, junction capacitance is decreased, and mobility of the carriers also may be improved.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US5904530A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US5904530A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US5904530A3</originalsourceid><addsrcrecordid>eNrjZLD3TS3JyE9RyE9TyE3MzsxLV_BxcVEoLikqTS4pLUpVKC5ITE5NUUgrys9VSM5IzMtLzVFIyS8AChWlpmfm5_EwsKYl5hSn8kJpbgZ5N9cQZw_d1IL8-FSw7rzUkvjQYFNLAxNTYwNHY8IqAIXWL6M</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of making LDD structure spaced from channel doped region</title><source>esp@cenet</source><creator>SHIN; HYUNG SOON</creator><creatorcontrib>SHIN; HYUNG SOON</creatorcontrib><description>A MOSFET and method of manufacture thereof is disclosed in which an ion implantation layer formed in the channel region is isolated from the source and drain regions. The source and drain regions are of a lightly doped drain or "LDD" structure. According to this MOSFET and method, short channel effects are decreased by the channel implant, yet hot carrier and doping compensation effects are decreased, junction capacitance is decreased, and mobility of the carriers also may be improved.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19990518&amp;DB=EPODOC&amp;CC=US&amp;NR=5904530A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19990518&amp;DB=EPODOC&amp;CC=US&amp;NR=5904530A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHIN; HYUNG SOON</creatorcontrib><title>Method of making LDD structure spaced from channel doped region</title><description>A MOSFET and method of manufacture thereof is disclosed in which an ion implantation layer formed in the channel region is isolated from the source and drain regions. The source and drain regions are of a lightly doped drain or "LDD" structure. According to this MOSFET and method, short channel effects are decreased by the channel implant, yet hot carrier and doping compensation effects are decreased, junction capacitance is decreased, and mobility of the carriers also may be improved.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD3TS3JyE9RyE9TyE3MzsxLV_BxcVEoLikqTS4pLUpVKC5ITE5NUUgrys9VSM5IzMtLzVFIyS8AChWlpmfm5_EwsKYl5hSn8kJpbgZ5N9cQZw_d1IL8-FSw7rzUkvjQYFNLAxNTYwNHY8IqAIXWL6M</recordid><startdate>19990518</startdate><enddate>19990518</enddate><creator>SHIN; HYUNG SOON</creator><scope>EVB</scope></search><sort><creationdate>19990518</creationdate><title>Method of making LDD structure spaced from channel doped region</title><author>SHIN; HYUNG SOON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US5904530A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SHIN; HYUNG SOON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHIN; HYUNG SOON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of making LDD structure spaced from channel doped region</title><date>1999-05-18</date><risdate>1999</risdate><abstract>A MOSFET and method of manufacture thereof is disclosed in which an ion implantation layer formed in the channel region is isolated from the source and drain regions. The source and drain regions are of a lightly doped drain or "LDD" structure. According to this MOSFET and method, short channel effects are decreased by the channel implant, yet hot carrier and doping compensation effects are decreased, junction capacitance is decreased, and mobility of the carriers also may be improved.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method of making LDD structure spaced from channel doped region
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T14%3A21%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SHIN;%20HYUNG%20SOON&rft.date=1999-05-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS5904530A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true