Method of making LDD structure spaced from channel doped region

Method of making LDD structure spaced from channel doped region

A MOSFET and method of manufacture thereof is disclosed in which an ion implantation layer formed in the channel region is isolated from the source and drain regions. The source and drain regions are of a lightly doped drain or "LDD" structure. According to this MOSFET and method, short ch...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SHIN, HYUNG SOON
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A MOSFET and method of manufacture thereof is disclosed in which an ion implantation layer formed in the channel region is isolated from the source and drain regions. The source and drain regions are of a lightly doped drain or "LDD" structure. According to this MOSFET and method, short channel effects are decreased by the channel implant, yet hot carrier and doping compensation effects are decreased, junction capacitance is decreased, and mobility of the carriers also may be improved.