Method for fabricating a capped gate conductor

A gate structure in a CMOS is fabricated wherein the encapsulation material is self-aligned with the gate conductor and the gate channel. The gate conductor is formed subsequent to the device doping and heat cycles for formulation of the source and drain junction, and is preferably of greater width...

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Hauptverfasser: AGNELLO, PAUL DAVID
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PAUL DAVID
description A gate structure in a CMOS is fabricated wherein the encapsulation material is self-aligned with the gate conductor and the gate channel. The gate conductor is formed subsequent to the device doping and heat cycles for formulation of the source and drain junction, and is preferably of greater width than the gate.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for fabricating a capped gate conductor
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