Negative differential resistance device based on tunneling through microclusters, and method therefor

A solid state electronic device exhibiting negative differential resistance is fabricated by depositing a thin layer of amorphous silicon on a single crystal substrate, doped N+. The amorphous silicon is simultaneously crystallized and oxidized in a dry N2 and O2 mixture. The result is a layer of am...

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Bibliographische Detailangaben

Hauptverfasser:	TSU, RAPHAEL, LUX, ROBERT A, HARVEY, JAMES F
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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