Method for depositing a flow fill layer on an integrated circuit wafer
An improved method for depositing a flow fill layer of an integrated circuit. Two flowlayers and two cap layers are deposited. The wafer is warmed between the deposition of the first cap layer and the deposition of the second flowlayer, to evaporate water from the first flowlayer. Preferably, each o...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | An improved method for depositing a flow fill layer of an integrated circuit. Two flowlayers and two cap layers are deposited. The wafer is warmed between the deposition of the first cap layer and the deposition of the second flowlayer, to evaporate water from the first flowlayer. Preferably, each of the cap layers is deposited in two separate steps of plasma enhanced chemical vapor deposition, to inhibit crack formation in the flowlayers. Most preferably, after the depositions of each flowlayer, the flowlayer is planarized by flowing H2O2 thereupon. |
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