Process for manufacturing a schottky diode with enhanced barrier height and high thermal stability
A schottky diode is formed of a sintered palladium platinum silicide in contact with a lightly doped silicon surface in which the platinum and palladium are present in a ratio of about one part to about 10 parts respectively, by weight.
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A schottky diode is formed of a sintered palladium platinum silicide in contact with a lightly doped silicon surface in which the platinum and palladium are present in a ratio of about one part to about 10 parts respectively, by weight. |
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