Semiconductor wafer and method of manufacturing same

Semiconductor wafer and method of manufacturing same

In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconduct...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KUSAKA, TAKAHISA, OHASHI, MASANORI, TAKIZAWA, RITSUO, KANBE, HIDEO, HIGUCHI, TAKAYOSHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1x1016 atoms/cm3 or more.