Semiconductor sensor with protective cap covering exposed conductive through-holes

A semiconductor sensor comprising a substrate having thick-film conductors formed on both sides of the substrate, a semiconductor sensor chip having a diaphragm to which a pressure to be detected is applied and a pan-shaped cap bonded to the mounting side of the substrate with a die bond agent, furt...

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Hauptverfasser: ICHIHASHI, MOTOMI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor sensor comprising a substrate having thick-film conductors formed on both sides of the substrate, a semiconductor sensor chip having a diaphragm to which a pressure to be detected is applied and a pan-shaped cap bonded to the mounting side of the substrate with a die bond agent, further comprises plural through-holes pierced through the substrate, conductors formed in plural through-holes which connect the thick-film conductors to each other, bonding electrodes formed from a thick-film conductor on the mounting side of the substrate, each being connected to the thick-film conductor of the mounting side of the substrate and to the semiconductor sensor chip by a wire bonding, and a protection glass film formed on the thick-film conductor of the mounting side having apertures for forming exposed conductor portions of the thick-film conductor, wherein the opening of each through-hole and the exposed conductor portions are disposed at the position to which the cap is bonded and covered by the die bond agent for bonding the cap.