Amplification type solid-state imaging device having a center of the source region displaced from a pixel center

Amplification type solid-state imaging device having a center of the source region displaced from a pixel center

An amplification type solid-state imaging device according to the present invention includes: a first gate region functioning as a photoelectric conversion region, a second gate region, and a source region, the first gate region surrounding the source region, and the second gate region adjoining the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KAWAZOE, HIDECHIKA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An amplification type solid-state imaging device according to the present invention includes: a first gate region functioning as a photoelectric conversion region, a second gate region, and a source region, the first gate region surrounding the source region, and the second gate region adjoining the first gate region on a side opposite the source region, to discharge signal charge accumulated in the first gate region through the second gate region. The center of the source region is displaced from the center of a pixel.