Method of implementing of a reference sample for use in a device for characterizing implanted doses

A reference sample for the calibration of a device for characterizing doses implanted on a wafer, consisting in defining a succession of at least two parallel strips on the wafer. The reference sample is produced by depositing a first implant mask on the wafer according to a pattern leaving a first...

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Bibliographische Detailangaben
Hauptverfasser:	LOMBARD, SERGE, BRUN, ALAIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	A reference sample for the calibration of a device for characterizing doses implanted on a wafer, consisting in defining a succession of at least two parallel strips on the wafer. The reference sample is produced by depositing a first implant mask on the wafer according to a pattern leaving a first strip accessible, performing a first ionic implant of a first dose, removing the first implant mask and depositing a second implant mask on the wafer according to a pattern leaving accessible the first strip as well as a second contiguous strip, performing a second ionic implant of a second dose, and removing the second implant mask.