Ceramic substrate and producing process thereof, and a suction carrier for wafers using a ceramic wafer-chucking substrate

PCT No. PCT/JP93/00120 Sec. 371 Date Nov. 28, 1994 Sec. 102(e) Date Nov. 28, 1994 PCT Filed Feb. 2, 1993 PCT Pub. No. WO93/24925 PCT Pub. Date Dec. 9, 1993A ceramic substrate for a hard disc, a thin film chip capacitor, and hybrid ICs, and a suction carrier for a substrate is constituted by using a...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KISHI, YUKIO, KAMIAKA, HIDETO
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER LIME, MAGNESIA MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY PHYSICS PRINTED CIRCUITS REFRACTORIES SEMICONDUCTOR DEVICES SLAG TREATMENT OF NATURAL STONE
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PCT No. PCT/JP93/00120 Sec. 371 Date Nov. 28, 1994 Sec. 102(e) Date Nov. 28, 1994 PCT Filed Feb. 2, 1993 PCT Pub. No. WO93/24925 PCT Pub. Date Dec. 9, 1993A ceramic substrate for a hard disc, a thin film chip capacitor, and hybrid ICs, and a suction carrier for a substrate is constituted by using a titanium oxide or aluminum oxide substrate having an extremely small number of pores having diameters of 3 mu m or more on the substrate surface. The substrate is produced by baking highly purified titanium oxide fine powder or highly purified aluminum oxide fine powder in the air, an inert atmosphere or a reducing atmosphere (at 1,100 DEG C. to 1,300 DEG C. for the former and at 1,200 DEG to 1,400 DEG C. for the latter) and HIP treating the baked material.