Method of making semiconductor components, in particular on GaAs of InP, with the substrate being recovered chemically

The method is characterized by steps consisting in: a) producing a substrate of GaAs or of InP, b) growing epitaxially on said substrate a separating layer of AlGaAs or of AlInAs that is aluminum-rich, c) growing epitaxially on said separating layer an active layer including aluminum-rich material, d) making a set of components by etching and metallization, e) applying a protective layer of a passivation material or of a photosensitive resin, f) selectively etching said protective layer so as to bare the separating layer between the components, g) fixing a common support plate on the assembly so as to hold the components together mechanically, and h) dissolving the material of the separating layer by the chemical action of a solvent on the bared regions, while leaving intact the other materials so as to separate the substrate from the components without dissolving the substrate.