Aluminum nitride junction structure

The present invention relates to a novel aluminum nitride junction structure, which is a aluminum nitride junction structure in which the junction portion between the base materials of a sintered product of aluminum nitride comprises the sintered product of aluminum nitride, and exhibits a heat cond...

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Hauptverfasser: WAKAMATSU, TETSUO
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present invention relates to a novel aluminum nitride junction structure, which is a aluminum nitride junction structure in which the junction portion between the base materials of a sintered product of aluminum nitride comprises the sintered product of aluminum nitride, and exhibits a heat conductivity of not smaller than 95% of the heat conductivity of the base materials. More specifically, the invention relates to an aluminum nitride junction structure which does not almost permit the heat conductivity to drop at the junction portion and features a high junction strength, and to a method of producing the aluminum nitride junction structure.