Vapor-phase growth apparatus and compound semiconductor device fabricated thereby

In a thermal radiation type substrate heating system of an MOCVD growth apparatus, a susceptor includes a semi-circular concavity is formed in each of wafer pockets at the forward area in a wafer rotation direction so that P-richness in a crystalline film grown at the gas upstream area is suppressed...

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Bibliographische Detailangaben
Hauptverfasser:	TAKEMI, MASAYOSHI, OHKURA, YUJI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	In a thermal radiation type substrate heating system of an MOCVD growth apparatus, a susceptor includes a semi-circular concavity is formed in each of wafer pockets at the forward area in a wafer rotation direction so that P-richness in a crystalline film grown at the gas upstream area is suppressed. Specifically, the conventional wafer holder exhibits a non-uniform temperature distribution so that the surface temperature is high at the gas upstream area and low at the downstream area. On the other hand, the structure according to the present invention realizes a high temperature at a wafer contact area and a low temperature at a wafer non-contact area, thus leading to a uniform surface temperature over the entire gas upstream and downstream areas.