Dry etch endpoint method

An improved method for selecting etch endpoint when dry etching conductive material layers for use in semiconductor device circuits has been created. The more precise endpoint selection procedure produces metallization patterns which are free from residues (resulting from under-etching) and free fro...

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Bibliographische Detailangaben
Hauptverfasser:	LIN, TING-HWANG, CHAO, YINGN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS TRANSPORTING
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Beschreibung
Zusammenfassung:	An improved method for selecting etch endpoint when dry etching conductive material layers for use in semiconductor device circuits has been created. The more precise endpoint selection procedure produces metallization patterns which are free from residues (resulting from under-etching) and free from sidewall attack and/or pattern degradation (resulting from over-etching). The method avoids costly and time consuming pre-sorting of substrates according to product pattern density.