Shallow trench isolation with oxide-nitride/oxynitride liner

Shallow trench isolation with oxide-nitride/oxynitride liner

Disclosed is an improved process and liner for trench isolation which includes either a single oxynitride layer or a dual oxynitride (or oxide)/nitride layer. Such a process and liner has an improved process window as well as being an effective O2 diffusion barrier and resistant to hot phosphoric an...

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Bibliographische Detailangaben
Hauptverfasser: BENEDICT, JOHN PRESTON, YOSHIDA, SEIKO, DOBUZINSKY, DAVID MARK, HAMMERL, ERWIN N, PALM, HERBERT, FLAITZ, PHILIP LEE, TAKATO, HIROSHI, HO, MOSEMAN, JAMES F
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Disclosed is an improved process and liner for trench isolation which includes either a single oxynitride layer or a dual oxynitride (or oxide)/nitride layer. Such a process and liner has an improved process window as well as being an effective O2 diffusion barrier and resistant to hot phosphoric and hydrofluoric acids.