Self-aligned dual gate MOSFET with an ultranarrow channel
A dual gate field effect transistor with an ultra thin channel of substantially uniform width formed by a self-aligned process utilizing selective etching or controlled oxidation between different materials to form a vertical channel extending between source and drain regions, having a thickness in...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A dual gate field effect transistor with an ultra thin channel of substantially uniform width formed by a self-aligned process utilizing selective etching or controlled oxidation between different materials to form a vertical channel extending between source and drain regions, having a thickness in the range from 2.5 nm to 100 nm. |
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