Bonded wafer

A bonded wafer with a bond junction having low resistivity due to the low level of oxides at the bond junction. A plasma that removes native oxide layers from wafers is exposed to the wafers. The plasma forms a hydrophobic polymer seal on the wafers, inhibiting subsequent native oxide growth upon ex...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	BAJOR, GEORGE, ROUSE, GEORGE V, LINN, JACK H
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A bonded wafer with a bond junction having low resistivity due to the low level of oxides at the bond junction. A plasma that removes native oxide layers from wafers is exposed to the wafers. The plasma forms a hydrophobic polymer seal on the wafers, inhibiting subsequent native oxide growth upon exposure to air. The polymer seal on the wafers to be bonded are pressed together and the wafers are annealed to form the bonded wafer in a non-oxidizing ambient. The bond junction formed is primarily silicon to silicon and silicon to carbon bonds.