Spin-valve GMR sensor with inbound exchange stabilization

A magnetoresistive spin valve giant magnetoresistive (GMR) transducer includes a magnetoresistive (MR)/GMR multi-layer with end portions spaced by a central active portion. A pair of electrical lead layers conducts electrical bias current to the transducer. Each electrical lead layer forms abutting junctions in contact with respective end portion of the MR/GMR layers. The longitudinal bias for the MR/GMR layers is provided by a pair of magnetic bias layers. Each magnetic bias layer is disposed in contact with a respective end portion of the MR/GMR layers. Bias current flows into the MR/GMR layers directly through the abutting junctions, allowing the magnetic bias to assume a different bias path through the end portions of the MR/GMR layers. The MR/GMR transducer allows both the electrical and magnetic biases to be optimally designed, without any constraint of one restricting the other, as the two biases often pose conflicting requirements. In addition, the direct electrical current path provides lower electrical resistance and heat dissipation which are of substantial benefit to the performance and reliability of the transducer.