Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same

Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same

A semiconductor integrated circuit comprising first n-channel MISFETs constituting the memory cells of a storage system, second n-channel MISFETs constituting the peripheral circuits of the storage system, and third n-channel MISFETs constituting the output circuit among the peripheral circuits. The...

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Bibliographische Detailangaben
Hauptverfasser: MURATA, JUN, KOBAYASHI, YUTAKA, KOJIMA, MASAYUKI, KANEKO, HIROKO, MAEDA, TOSHIO, KIGUCHI, YASUO, OGISHIMA, ATSUSHI, SADAOKA, MASATO, UCHIYAMA, HIROYUKI, ENAMI, HIROMICHI, KASAHARA, OSAMU, KADOTA, KAZUYA, NAGAO, MASAKI, TADAKI, YOSHITAKA, NAKAMURA, HISASHI, KOIKE, ATSUYOSHI, SEKIGUCHI, TOSHIHIRO, NOJIRI, KAZUO, MIYAZAWA, FUNABASHI, MICHIMASA, CHIKAHARA, TADASHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor integrated circuit comprising first n-channel MISFETs constituting the memory cells of a storage system, second n-channel MISFETs constituting the peripheral circuits of the storage system, and third n-channel MISFETs constituting the output circuit among the peripheral circuits. The respective threshold voltages of the first n-channel MISFETs, the second n-channel MISFETs and the third n-channel MISFETs are decreased in that order when the respective gate lengths of those MISFETs are substantially the same.