Method for the determination of nitrogen concentration in compound semiconductor

An efficient method is proposed for the determination of the concentration of nitrogen in an indirect-transition compound semiconductor such as gallium phosphide added as an isoelectronic trap. The method utilizes the fact that a good correlation of proportionality is held between the nitrogen conce...

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Bibliographische Detailangaben
Hauptverfasser:	YAMADA, MASATO, HIGUCHI, SUSUMU, YANAGISAWA, MUNEHISA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	An efficient method is proposed for the determination of the concentration of nitrogen in an indirect-transition compound semiconductor such as gallium phosphide added as an isoelectronic trap. The method utilizes the fact that a good correlation of proportionality is held between the nitrogen concentration and the difference DELTA alpha (= alpha N- alpha ) in the absorption coefficient of light of a wavelength identical with the wavelength lambda N due to the excitons under constraint in the isoelectronic trap between the semiconductors with ( alpha N) and without ( alpha ) addition of nitrogen. A working curve is presented between the nitrogen concentration determined by the method of SIMS and the value of DELTA alpha .