Use of oxalyl chloride to form chloride-doped silicon dioxide films of silicon substrates
A process of forming chlorine-doped silicon dioxide films on a silicon substrate comprising oxidizing said silicon substrate in the presence of a chlorine source, thereby forming said chlorine-doped silicon dioxide film on said silicon substrate, said chlorine source being oxalyl chloride.
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A process of forming chlorine-doped silicon dioxide films on a silicon substrate comprising oxidizing said silicon substrate in the presence of a chlorine source, thereby forming said chlorine-doped silicon dioxide film on said silicon substrate, said chlorine source being oxalyl chloride. |
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