Process for forming a semiconductor device including a capacitor

A capacitor for a semiconductor device is formed by selectively processing a portion of a layer (41, 113) to form an electrode (411, 81, 101, 111) for the capacitor. The selective processing includes selective doping, selective silicidation, selective oxidation, or the like. Contacts can be made to...

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Hauptverfasser:	STEINBERG, JOSEPH C, HAAS, JR., JOSEPH MARSHALL, TRAHAN, ROBERT J
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	STEINBERG JOSEPH C HAAS, JR. JOSEPH MARSHALL TRAHAN ROBERT J
description	A capacitor for a semiconductor device is formed by selectively processing a portion of a layer (41, 113) to form an electrode (411, 81, 101, 111) for the capacitor. The selective processing includes selective doping, selective silicidation, selective oxidation, or the like. Contacts can be made to the electrode (411) with a reduced likelihood of the contact electrically shorting the electrodes of the capacitor together. When forming contact openings, misalignment tolerance is increased.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US5714411A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US5714411A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US5714411A3</originalsourceid><addsrcrecordid>eNrjZHAIKMpPTi0uVkjLLwLh3My8dIVEheLU3Mzk_LyU0uQSoHhKallmcqpCZl5yTmkKREFyYkFiciZQkoeBNS0xpziVF0pzM8i7uYY4e-imFuTHpxYDVaXmpZbEhwabmhuamBgaOhoTVgEAHEAwuw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Process for forming a semiconductor device including a capacitor</title><source>esp@cenet</source><creator>STEINBERG; JOSEPH C ; HAAS, JR.; JOSEPH MARSHALL ; TRAHAN; ROBERT J</creator><creatorcontrib>STEINBERG; JOSEPH C ; HAAS, JR.; JOSEPH MARSHALL ; TRAHAN; ROBERT J</creatorcontrib><description>A capacitor for a semiconductor device is formed by selectively processing a portion of a layer (41, 113) to form an electrode (411, 81, 101, 111) for the capacitor. The selective processing includes selective doping, selective silicidation, selective oxidation, or the like. Contacts can be made to the electrode (411) with a reduced likelihood of the contact electrically shorting the electrodes of the capacitor together. When forming contact openings, misalignment tolerance is increased.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1998</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980203&DB=EPODOC&CC=US&NR=5714411A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980203&DB=EPODOC&CC=US&NR=5714411A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>STEINBERG; JOSEPH C</creatorcontrib><creatorcontrib>HAAS, JR.; JOSEPH MARSHALL</creatorcontrib><creatorcontrib>TRAHAN; ROBERT J</creatorcontrib><title>Process for forming a semiconductor device including a capacitor</title><description>A capacitor for a semiconductor device is formed by selectively processing a portion of a layer (41, 113) to form an electrode (411, 81, 101, 111) for the capacitor. The selective processing includes selective doping, selective silicidation, selective oxidation, or the like. Contacts can be made to the electrode (411) with a reduced likelihood of the contact electrically shorting the electrodes of the capacitor together. When forming contact openings, misalignment tolerance is increased.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1998</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAIKMpPTi0uVkjLLwLh3My8dIVEheLU3Mzk_LyU0uQSoHhKallmcqpCZl5yTmkKREFyYkFiciZQkoeBNS0xpziVF0pzM8i7uYY4e-imFuTHpxYDVaXmpZbEhwabmhuamBgaOhoTVgEAHEAwuw</recordid><startdate>19980203</startdate><enddate>19980203</enddate><creator>STEINBERG; JOSEPH C</creator><creator>HAAS, JR.; JOSEPH MARSHALL</creator><creator>TRAHAN; ROBERT J</creator><scope>EVB</scope></search><sort><creationdate>19980203</creationdate><title>Process for forming a semiconductor device including a capacitor</title><author>STEINBERG; JOSEPH C ; HAAS, JR.; JOSEPH MARSHALL ; TRAHAN; ROBERT J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US5714411A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1998</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>STEINBERG; JOSEPH C</creatorcontrib><creatorcontrib>HAAS, JR.; JOSEPH MARSHALL</creatorcontrib><creatorcontrib>TRAHAN; ROBERT J</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>STEINBERG; JOSEPH C</au><au>HAAS, JR.; JOSEPH MARSHALL</au><au>TRAHAN; ROBERT J</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Process for forming a semiconductor device including a capacitor</title><date>1998-02-03</date><risdate>1998</risdate><abstract>A capacitor for a semiconductor device is formed by selectively processing a portion of a layer (41, 113) to form an electrode (411, 81, 101, 111) for the capacitor. The selective processing includes selective doping, selective silicidation, selective oxidation, or the like. Contacts can be made to the electrode (411) with a reduced likelihood of the contact electrically shorting the electrodes of the capacitor together. When forming contact openings, misalignment tolerance is increased.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Process for forming a semiconductor device including a capacitor
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T14%3A15%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=STEINBERG;%20JOSEPH%20C&rft.date=1998-02-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS5714411A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true